| PART |
Description |
Maker |
| ECA-2AM100 ECJ-2VB1H103K 1812SMS-68NJLB ERJ-8GEYJ1 |
280W GaN Wideband Pulsed Power Amplifier
|
RF Micro Devices
|
| MAPG-S22729-350L00 MAPG-002729-350L00 |
S-Band 350 W Radar Pulsed Power GaN Pallet
|
M/A-COM Technology Solu...
|
| RF3934 |
GaN WIDE-BAND POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| RF3932 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA3942 |
35W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| SA5204AD SA5204AN NE5204 NE5204A NE5204AD NE5204AN |
RES 110 OHM 1/10W .5% 0805 SMD 0 MHz - 350 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Wide-band high-frequency amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 1214-700P1 |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-700P |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-110V |
Pulsed Power L-Band (Si)
|
Microsemi
|
